PART |
Description |
Maker |
X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9 |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt :SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage :SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2 RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm; Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8 IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
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http:// INTERSIL[Intersil Corporation] Intersil, Corp.
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7MBP25RJ120 |
IGBT IPM R-series 1200V class 1200V / 25A 7 in one-package
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Fuji Electric ETC[ETC] List of Unclassifed Manufacturers
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IRGSL4B60KD1 IRGS4B60KD1 IRGB4B60KD1 |
600V Low-Vceon Non Punch Through Copack IGBT in a TO-262 package 600V Low-Vceon Non Punch Through Copack IGBT in a D2-Pak package 600V Low-Vceon Non Punch Through Copack IGBT in a TO-220 FullPak package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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IRF[International Rectifier]
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100JB12L 35MB100A 35MB10A 35MB120A 100JB10L 100JB1 |
10 to 35 Amp Rectifier Bridges V(rrm): 400V; 25A rectifier bridge V(rrm): 1200V; 35A rectifier bridge V(rrm): 100V; 25A rectifier bridge V(rrm): 1000V; 25A rectifier bridge V(rrm): 1000V; 10A rectifier bridge V(rrm): 100V; 10A rectifier bridge V(rrm): 400V; 10A rectifier bridge V(rrm): 1200V; 10A rectifier bridge V(rrm): 50V; 10A rectifier bridge V(rrm): 200V; 10A rectifier bridge V(rrm): 600V; 10A rectifier bridge V(rrm): 800V; 10A rectifier bridge V(rrm): 1200V; 25A rectifier bridge V(rrm): 1000V; 35A rectifier bridge V(rrm): 50V; 25A rectifier bridge V(rrm): 600V; 25A rectifier bridge
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IRF[International Rectifier]
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6MBI25L-120 |
IGBT(1200V 25A)
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http://
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6MBP25TEA120 |
1200V / 25A 6 in one-package
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FUJI ELECTRIC HOLDINGS CO., LTD. ETC[ETC]
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IRG4PH40U |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AC INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条) INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A) 1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
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International Rectifier, Corp. IRF[International Rectifier]
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6MBP25RA120 |
IGBT-IPM(1200V/25A)
|
Fuji Electric
|
SIDC14D120H6 |
Diodes - HV Chips - SIDC14D120H6, 1200V, 25A
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Infineon
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NGTB25N120IHLW |
IGBT 1200V 25A FS1 Induction Heating
|
ON Semiconductor
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7MBR25UA120 |
IGBT MODULE (U series) 1200V / 25A / PIM
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FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
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